PART |
Description |
Maker |
GS8161Z32D-200I GS8161Z32D-166I GS8161Z32D-133I GS |
6.5ns 200MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 7ns 166MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 133MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 6ns 225MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 250MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 7.5ns 150MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 7ns 166MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 250MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 133MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 7.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 133MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 250MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 6ns 225MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 6.5ns 200MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
GS8160Z36T-250I GS8160Z18T GS8160Z18T-133 GS8160Z1 |
18Mb Burst SRAMs 18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 512K x 36 QDR II PipeLined SRAM Storage, Cases Tools, Applicator RoHS Compliant: NA Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA 18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
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IDT http:// Integrated Device Technology, Inc.
|
IDT71P73204250BQ IDT71P73104250BQ IDT71P73804250BQ |
18Mb Pipelined DDR⑩II SRAM Burst of 4 18Mb Pipelined DDR垄芒II SRAM Burst of 4
|
Integrated Device Technology
|
IS61VPS102418A-250B2I IS61LPS102418A-200B2 IS61VPS |
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119 256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc. Integrated Silicon Solu...
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IDT71P74804 IDT71P74804S167BQ IDT71P74804S200BQ ID |
18Mb Pipelined QDR II SRAM Burst of 4
|
Integrated Device Technology
|
GS8640Z18T-V GS8640Z18T-250V GS8640Z18T-250IV |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 72Mb流水线和流量,通过同步唑的SRAM 72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
IDT71P71104 IDT71P71204 |
(IDT71P71x04) 18Mb Pipelined DDRII SRAM Burst of 2
|
IDT
|
IDT71P74104S167BQ IDT71P74804S250BQ IDT71P74604S20 |
18Mb Pipelined QDR II SRAM Burst of 4 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDR II SRAM Burst of 4 1M X 18 QDR SRAM, 0.45 ns, PBGA165 18Mb Pipelined QDR II SRAM Burst of 4 512K X 36 QDR SRAM, 0.45 ns, PBGA165 18Mb Pipelined QDR II SRAM Burst of 4 2M X 8 QDR SRAM, 0.5 ns, PBGA165
|
Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
IDTIDT71P71804167BQ |
18Mb Pipelined DDR⑩II SRAM Burst of 2 35.7流水线的DDR II SRAM的突发⑩2
|
Integrated Device Technology, Inc.
|